Anisotropic Interface Roughness Scattering in a Lateral Superlattice

A novel interface roughness due to the perturbation of the periodic interface structure is studied theoretically for a lateral superlattice realized by an interface corrugated quantum well. It is found by numerical simulation that the correlation function for interface roughness can be well modeled by a sinusoidal function with an exponential decay in the direction of corrugation. Such a feature makes the correlation function far from a Gaussian function which is extensively used as a theoretical approximation of the correlation function for interface roughness. With such a correlation function, the influence of interface roughness scattering on electronic transport in the lateral superlattice is investigated.Consequently, it gives rise to a high anisotropy of electronic transport both in the absence and presence of a magnetic field, by which the relevant experiments can be well explained.

作 者： ZHENG Yi-Song LU Tian-Quan ZHANG Cheng-xiang   作者單位： Department of Physics, Jilin University, Changchun 130023, China  刊 名： 理論物理通訊（英文版）  ISTIC SCI 英文刊名： COMMUNICATIONS IN THEORETICAL PHYSICS  年，卷(期)： 2004 42(8)  分類號： O4  關鍵詞： interface roughness   lateral superlattice   correlation function   anisotropic conductivity  

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